Description
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 130 W Through Hole TO-3P(N)
Product Details
10electronicpartsUK2SC5242OQND
2SC5242-O(Q)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Transistor Type
- NPN
- Packaging
- Tray
- Current - Collector (Ic) (Max)
- 15 A
- Voltage - Collector Emitter Breakdown (Max)
- 230 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max)
- 5µA (ICBO)
- Frequency - Transition
- 30MHz
- Power - Max
- 130 W
- Supplier Device Package
- TO-3P(N)