Description
IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
Product Details
10electronicpartsUK264GT30J65MRBS1END
GT30J65MRB,S1E
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Packaging
- Tube
- Current - Collector (Ic) (Max)
- 60 A
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Power - Max
- 200 W
- Supplier Device Package
- TO-3P(N)