Description
Bipolar (BJT) Transistor NPN 160 V 18 A 30MHz 180 W Through Hole TO-3P(L)
Product Details
1electronicpartsUKTTC0002QND
TTC0002(Q)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Transistor Type
- NPN
- Packaging
- Bulk
- Base Product Number
- TTC0002
- Current - Collector (Ic) (Max)
- 18 A
- Voltage - Collector Emitter Breakdown (Max)
- 160 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 900mA, 9A
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
- Frequency - Transition
- 30MHz
- Power - Max
- 180 W
- Supplier Device Package
- TO-3P(L)