Description
IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
Product Details
1electronicpartsUKGT30J121QND
GT30J121(Q)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Packaging
- Tube
- Current - Collector (Ic) (Max)
- 30 A
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Power - Max
- 170 W
- Supplier Device Package
- TO-3P(N)