Description
Bipolar (BJT) Transistor NPN - Darlington 400 V 6 A 2 W Through Hole TO-220SIS
Product Details
1electronicpartsUK264TTD1409BS4XND
TTD1409B,S4X
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Transistor Type
- NPN - Darlington
- Packaging
- Tube
- Base Product Number
- TTD1409
- Current - Collector (Ic) (Max)
- 6 A
- Voltage - Collector Emitter Breakdown (Max)
- 400 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 600 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 40mA, 4A
- Current - Collector Cutoff (Max)
- 20µA (ICBO)
- Frequency - Transition
- -
- Power - Max
- 2 W
- Supplier Device Package
- TO-220SIS