Description
Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 1.5 W Through Hole TO-126N
Product Details
1electronicpartsUK264TTC011BQND
TTC011B,Q
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Transistor Type
- NPN
- Packaging
- Tray
- Current - Collector (Ic) (Max)
- 1 A
- Voltage - Collector Emitter Breakdown (Max)
- 230 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max)
- 200nA (ICBO)
- Frequency - Transition
- 100MHz
- Power - Max
- 1.5 W
- Supplier Device Package
- TO-126N