Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 1.8A, 2A 750mW Surface Mount SMV
Product Details
1electronicpartsUK264HN4B102JTE85L,FTRND
HN4B102J(TE85L,F)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- 1 NPN, 1 PNP
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- HN4B102
- Current - Collector (Ic) (Max)
- 1.8A, 2A
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 200mA, 2V
- Vce Saturation (Max) @ Ib, Ic
- 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- -
- Power - Max
- 750mW
- Supplier Device Package
- SMV