Description
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
Product Details
1electronicpartsUKHN3C10FUTE85LFTRND
HN3C10FUTE85LF
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- 2 NPN (Dual)
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- HN3C10
- Current - Collector (Ic) (Max)
- 80mA
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 20mA, 10V
- Frequency - Transition
- 7GHz
- Power - Max
- 200mW
- Supplier Device Package
- US6