Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Base 120V 100mA 100MHz 300mW Surface Mount SMV
Product Details
1electronicpartsUKHN4C51JTE85LFTRND
HN4C51J(TE85L,F)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- 2 NPN (Dual) Common Base
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- HN4C51
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 100MHz
- Power - Max
- 300mW
- Supplier Device Package
- SMV