Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV
Product Details
1electronicpartsUKHN4B01JETE85LFTRND
HN4B01JE(TE85L,F)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- 1 NPN, 1 PNP (Emitter Coupled)
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- HN4B01
- Current - Collector (Ic) (Max)
- 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 80MHz
- Power - Max
- 100mW
- Supplier Device Package
- ESV