Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 120MHz, 150MHz 200mW Surface Mount US6
Product Details
1electronicpartsUK264HN1B01FUGRLXHFTRND
HN1B01FU-GR,LXHF
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Grade
- Automotive
- Transistor Type
- 1 NPN, 1 PNP
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- HN1B01
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 120MHz, 150MHz
- Power - Max
- 200mW
- Supplier Device Package
- US6