Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3
Product Details
1electronicpartsUKTDTA114YLMTRND
TDTA114Y,LM
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- PNP - Pre-Biased
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- TDTA114
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250 MHz
- Power - Max
- 320 mW
- Supplier Device Package
- SOT-23-3
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms