Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount S-Mini
Product Details
1electronicpartsUKRN2406LFTRND
RN2406,LF
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- PNP - Pre-Biased
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- RN2406
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 200 MHz
- Power - Max
- 200 mW
- Supplier Device Package
- S-Mini
- Resistor - Base (R1)
- 4.7 kOhms
- Resistor - Emitter Base (R2)
- 47 kOhms