Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
Product Details
1electronicpartsUK48782N5551TBND
2N5551
3 Items
Data sheet
- Manufacturer
- DIOTEC SEMICONDUCTOR
- Part status
- Active
- Series
- -
- Mounting Type
- Through Hole
- Grade
- -
- Transistor Type
- NPN
- Packaging
- Cut Tape (CT)Bulk
- Qualification
- -
- Current - Collector (Ic) (Max)
- 600 mA
- Voltage - Collector Emitter Breakdown (Max)
- 160 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
- Frequency - Transition
- 300MHz
- Power - Max
- 625 mW
- Supplier Device Package
- TO-92