1 pcs : RN1962FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

      1electronicpartsUKRN1962FETE85L,F
      £7.60
      Delivery: 10-15 business days
      Quantity
      Last items in stock
      3 Items

      Description
      Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
      Product Details
      1electronicpartsUKRN1962FETE85L,F
      RN1962FE(TE85L,F)
      3 Items

      Data sheet

      Manufacturer
      Toshiba Semiconductor and Storage
      Part status
      Obsolete
      Series
      -
      Mounting Type
      Surface Mount
      Transistor Type
      2 NPN - Pre-Biased (Dual)
      Packaging
      Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
      Base Product Number
      RN1962
      Current - Collector (Ic) (Max)
      100mA
      Voltage - Collector Emitter Breakdown (Max)
      50V
      DC Current Gain (hFE) (Min) @ Ic, Vce
      50 @ 10mA, 5V
      Vce Saturation (Max) @ Ib, Ic
      300mV @ 250µA, 5mA
      Current - Collector Cutoff (Max)
      100nA (ICBO)
      Frequency - Transition
      250MHz
      Power - Max
      100mW
      Supplier Device Package
      ES6
      Resistor - Base (R1)
      10kOhms
      Resistor - Emitter Base (R2)
      10kOhms