Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Product Details
1electronicpartsUKRN1962FETE85L,F
RN1962FE(TE85L,F)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Obsolete
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- RN1962
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 250MHz
- Power - Max
- 100mW
- Supplier Device Package
- ES6
- Resistor - Base (R1)
- 10kOhms
- Resistor - Emitter Base (R2)
- 10kOhms