Description
Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 150 mW Surface Mount TO-236
Product Details
1electronicpartsUK2SC2712OTE85LFTRND
2SC2712-OTE85LF
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- NPN
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- 2SC2712
- Current - Collector (Ic) (Max)
- 150 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 80MHz
- Power - Max
- 150 mW
- Supplier Device Package
- TO-236