Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
Product Details
1electronicpartsUKUNR411400A
UNR411400A
3 Items
Data sheet
- Manufacturer
- Panasonic Electronic Components
- Part status
- Obsolete
- Series
- -
- Mounting Type
- Through Hole
- Transistor Type
- PNP - Pre-Biased
- Packaging
- Cut Tape (CT)Tape & Box (TB)
- Base Product Number
- UNR411
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 80 MHz
- Power - Max
- 300 mW
- Supplier Device Package
- NS-B1
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 47 kOhms