Description
Bipolar (BJT) Transistor PNP 12 V 400 mA 130MHz 100 mW Surface Mount VESM
Product Details
1electronicpartsUK2SA1955FVBTPL3Z
2SA1955FVBTPL3Z
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Obsolete
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- PNP
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- 2SA1955
- Current - Collector (Ic) (Max)
- 400 mA
- Voltage - Collector Emitter Breakdown (Max)
- 12 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 130MHz
- Power - Max
- 100 mW
- Supplier Device Package
- VESM