Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Product Details
1electronicpartsUKRN1113T5LFTTRND
RN1113(T5L,F,T)
3 Items
Data sheet
- Manufacturer
- Toshiba Semiconductor and Storage
- Part status
- Active
- Series
- -
- Mounting Type
- Surface Mount
- Transistor Type
- NPN - Pre-Biased
- Packaging
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- Base Product Number
- RN1113
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 250 MHz
- Power - Max
- 100 mW
- Supplier Device Package
- SSM
- Resistor - Base (R1)
- 47 kOhms