10 pcs : FFSD1065B-F085 - Schottky Diodes & Rectifiers 650V 10A SIC SBD G EN1.5
    • 10 pcs : FFSD1065B-F085 - Schottky Diodes & Rectifiers 650V 10A SIC SBD G EN1.5

    10 pcs : FFSD1065B-F085 - Schottky Diodes & Rectifiers 650V 10A SIC SBD G EN1.5

    10electronicpartsUK863FFSD1065BF085
    ONSEMI
    10 pcs : FFSD1065B-F085 - Schottky Diodes & Rectifiers 650V 10A SIC SBD G EN1.5
    £63.25
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Wide Bandgap EliteSiC (Silicon Carbide) Devices onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
    Product Details
    ONSEMI
    10electronicpartsUK863FFSD1065BF085
    FFSD1065B-F085
    10 Items

    Data sheet

    Manufacturer
    ONSEMI
    Width
    3.9 mm
    Height
    1.75 mm
    Length
    4.9 mm
    Series
    TPS1100
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    MOSFET
    Package/Case
    SOIC-8
    Product Category
    MOSFET
    Packaging
    Tube
    RoHS
    Details
    Brand
    Texas Instruments
    Factory Pack Quantity Factory Pack Quantity
    75
    Subcategory
    MOSFETs
    Unit Weight
    74 mg
    Pd - Power Dissipation
    791 mW
    Typical Turn-Off Delay Time
    13 ns