STPSC2H12-Y Schottky Silicon Carbide Diodes STMicroelectronics STPSC2H12-Y Schottky Silicon Carbide Diodes are ultra-high-performance power Schottky diodes. STMicroelectronics STPSC2H12-Y diodes are manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200V rating. Due to the Schottky construction, norecovery is shown at turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.