The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.Revolutionary semiconductor material - Silicon CarbideBenchmark switching behaviourNo reverse recovery/ No forward recoveryTemperature independent switching behaviourEnabling higher frequency / increased power density solutionsHigher system reliability due to lower operating temperaturesReduced EMI