1 pcs : CUHS10F60,H3F - Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
    • 1 pcs : CUHS10F60,H3F - Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

    1 pcs : CUHS10F60,H3F - Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

    electronicparts-UK/M/757-CUHS10F60H3F
    TOSHIBA
    £10.84
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    CUHS10F60 Schottky Barrier Diode Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.
    Product Details
    TOSHIBA
    electronicparts-UK/M/757-CUHS10F60H3F
    CUHS10F60,H3F
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Series
    CUHSxx
    Maximum Operating Temperature
    + 150 C
    Mounting Style
    SMD/SMT
    Product Type
    Schottky Diodes & Rectifiers
    Package/Case
    US2H-2
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    5.400 mg
    If - Forward Current
    1 A
    Vf - Forward Voltage
    560 mV
    Ir - Reverse Current
    6 uA