RBRxxBGE Schottky Barrier Diodes ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes feature a silicon epitaxial planar structure and 30V, 40V, or 60V repetitive peak reverse voltage. The RBRxxBGE Schottky Barrier Diodes offer high reliability, a low VF, and cathode common dual type. The ROHM RBRxxBGE Diodes are designed for switching power supply applications.