1 pcs : YQ20BGE10SDTL - Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE1
    • 1 pcs : YQ20BGE10SDTL - Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE1

    1 pcs : YQ20BGE10SDTL - Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE1

    electronicparts-UK/M/755-YQ20BGE10SDTL
    £8.89
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    YQx High Efficient Schottky Barrier Diodes ROHM Semiconductor YQx High Efficient Schottky Barrier Diodes are designed to improve the tradeoff between low VF and low IR. Despite low VF values, these devices consistently deliver stable performances even when subjected to higher temperatures. These highly efficient power mold-type Schottky barrier diodes exhibit trench MOS structures. The YQx Schottky barrier diodes offer 100V reverse voltage, high reliability, and low capacitances. These devices are ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
    Product Details
    electronicparts-UK/M/755-YQ20BGE10SDTL
    YQ20BGE10SDTL
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 150 C
    Mounting Style
    SMD/SMT
    Product Type
    Schottky Diodes & Rectifiers
    Configuration
    Single
    Package/Case
    TO-252-2
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    Schottky Diodes
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    Diodes & Rectifiers
    Vr - Reverse Voltage
    100 V
    If - Forward Current
    20 A
    Vf - Forward Voltage
    790 mV
    Ir - Reverse Current
    80 uA