Silicon Carbide 1200V MOSFETs & Diodes Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for use in high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as they offer a 15V gate drive. The 1200V SiC MOSFETs provide improved system-level efficiency with lower switching and conduction losses and improved system-level power density. Increased linear COSS behavior can also enhance performance for soft switching applications.