1 pcs : FFSH5065A-F155 - Schottky Diodes & Rectifiers SIC DIODE TO247 650V
    • 1 pcs : FFSH5065A-F155 - Schottky Diodes & Rectifiers SIC DIODE TO247 650V

    1 pcs : FFSH5065A-F155 - Schottky Diodes & Rectifiers SIC DIODE TO247 650V

    Allparts-UK/M/863-FFSH5065A-F155
    ONSEMI
    £29.92
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Wide Bandgap EliteSiC (Silicon Carbide) Devices onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
    Product Details
    ONSEMI
    Allparts-UK/M/863-FFSH5065A-F155
    FFSH5065A-F155
    10 Items

    Data sheet

    Manufacturer
    ONSEMI
    Series
    FFSH5065A-F155
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    Schottky Diodes & Rectifiers
    Configuration
    Single
    Package/Case
    TO-247-3
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    Tube
    RoHS
    Details
    Brand
    onsemi
    Product
    Schottky Silicon Carbide Diodes
    Factory Pack Quantity Factory Pack Quantity
    450
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    5.457 g
    REACH - SVHC
    Details
    Pd - Power Dissipation
    429 W
    Vr - Reverse Voltage
    650 V
    If - Forward Current
    50 A
    Vf - Forward Voltage
    1.51 V
    Ir - Reverse Current
    200 uA