1 pcs : TRS10A65F,S1Q - Schottky Diodes & Rectifiers DIODE
    • 1 pcs : TRS10A65F,S1Q - Schottky Diodes & Rectifiers DIODE

    1 pcs : TRS10A65F,S1Q - Schottky Diodes & Rectifiers DIODE

    Allparts-UK/M/757-TRS10A65F,S1Q
    TOSHIBA
    £12.35
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SiC Schottky Barrier Diodes Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.
    Product Details
    TOSHIBA
    Allparts-UK/M/757-TRS10A65F,S1Q
    TRS10A65F,S1Q
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    -
    Mounting Style
    Through Hole
    Product Type
    Schottky Diodes & Rectifiers
    Configuration
    Single
    Package/Case
    TO-220F-2L
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    Tube
    RoHS
    Details
    Brand
    Toshiba
    Product
    Schottky Silicon Carbide Diodes
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    1.830 g
    Part # Aliases
    TRS10A65F,S1Q(S2
    Vr - Reverse Voltage
    650 V
    If - Forward Current
    10 A
    Vf - Forward Voltage
    1.45 V
    Ir - Reverse Current
    500 nA