1 pcs : TRS6E65F,S1Q - Schottky Diodes & Rectifiers V650 IF6A
    • 1 pcs : TRS6E65F,S1Q - Schottky Diodes & Rectifiers V650 IF6A

    1 pcs : TRS6E65F,S1Q - Schottky Diodes & Rectifiers V650 IF6A

    Allparts-UK/M/757-TRS6E65F,S1Q
    TOSHIBA
    £10.06
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TRSxE65F SiC Schottky Barrier Diodes Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in dimensions 10.05mm x 15.3mm x 4.45mm. The TRSxE65F Schottky barrier diodes are ideal to use in power factor correction, uninterruptible power supplies, and DC-DC converters.
    Product Details
    TOSHIBA
    Allparts-UK/M/757-TRS6E65F,S1Q
    TRS6E65F,S1Q
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Maximum Operating Temperature
    + 175 C
    Mounting Style
    Through Hole
    Product Type
    Schottky Diodes & Rectifiers
    Configuration
    Single
    Package/Case
    TO-220-2
    Product Category
    Schottky Diodes & Rectifiers
    Packaging
    Tube
    RoHS
    Details
    Brand
    Toshiba
    Product
    Schottky Silicon Carbide Diodes
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    2 g
    Part # Aliases
    TRS6E65F,S1Q(S
    If - Forward Current
    6 A
    Vf - Forward Voltage
    1.45 V
    Ir - Reverse Current
    300 nA