TRSxE65F SiC Schottky Barrier Diodes Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in dimensions 10.05mm x 15.3mm x 4.45mm. The TRSxE65F Schottky barrier diodes are ideal to use in power factor correction, uninterruptible power supplies, and DC-DC converters.