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    1 pcs : A5G35S004NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300-4300 MHz, 24.5 dBm Avg., 48 V
    • 1 pcs : A5G35S004NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300-4300 MHz, 24.5 dBm Avg., 48 V

    1 pcs : A5G35S004NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300-4300 MHz, 24.5 dBm Avg., 48 V

    Allparts-UK/M/771-A5G35S004NT6
    £39.61
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    A5G35S004N Airfast RF Power GaN Transistor NXP Semiconductors A5G35S004N Airfast RF Power GaN Transistor is designed for cellular base station applications. These applications include those covering the frequency range of 3300 to 4300MHz. The transistor is housed in a HLSON6, thermal enhanced low profile small outline package.
    Product Details
    NXP Semiconductors
    Allparts-UK/M/771-A5G35S004NT6
    A5G35S004NT6
    10 Items

    Data sheet

    Manufacturer
    NXP
    Operating frequency
    3.3 GHz to 4.3 GHz
    Series
    A5G35S004N
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Type
    RF Power MOSFET
    Product Type
    RF MOSFET Transistors
    Technology
    GaN Si
    Package/Case
    DFN-6
    Gain
    16.9 dB
    Product Category
    RF MOSFET Transistors
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    NXP Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    5000
    Subcategory
    MOSFETs
    Part # Aliases
    935417637528