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    1 pcs : A5G35S008NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 27 dBm Avg., 48 V
    • 1 pcs : A5G35S008NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 27 dBm Avg., 48 V

    1 pcs : A5G35S008NT6 - RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 27 dBm Avg., 48 V

    Allparts-UK/M/771-A5G35S008NT6
    £44.88
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    A5G35S008N Airfast RF Power GaN Transistor NXP Semiconductors A5G35S008N Airfast RF Power GaN Transistor is a 27dBm RF power GaN transistor. It is designed for cellular base station applications covering the frequency range of 3300 to 3800MHz. The device has high terminal impedances for optimal broadband performance.
    Product Details
    NXP Semiconductors
    Allparts-UK/M/771-A5G35S008NT6
    A5G35S008NT6
    10 Items

    Data sheet

    Manufacturer
    NXP
    Series
    A5G35S008N
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Type
    RF Power MOSFET
    Product Type
    RF MOSFET Transistors
    Package/Case
    DFN-6
    Product Category
    RF MOSFET Transistors
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    NXP Semiconductors
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    5000
    Subcategory
    MOSFETs
    Part # Aliases
    935427147528