1 pcs : MRF101BN - RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
    • 1 pcs : MRF101BN - RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

    1 pcs : MRF101BN - RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

    Allparts-UK/M/771-MRF101BN
    £56.51
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    MRF101 RF Power LDMOS Transistors NXP Semiconductors MRF101 RF Power LDMOS Transistors are highly-rugged N-channel enhancement mode lateral MOSFETs designed to exhibit high performance up to 250MHz. These transistors integrate ESD protection with a greater negative gate-source voltage range for improved Class C operation. Both the transistors come in two pin-out versions mirroring each other to support push-pull configurations for further flexibility. The MRF101 transistors are ideal for high Voltage Standing Wave Ratio (VSWR) industrial, scientific, and medical applications.
    Product Details
    Allparts-UK/M/771-MRF101BN
    MRF101BN
    10 Items

    Data sheet

    Manufacturer
    NXP
    Series
    MRF101BN
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Through Hole
    Type
    RF Power MOSFET
    Product Type
    RF MOSFET Transistors
    Package/Case
    TO-220-3
    Product Category
    RF MOSFET Transistors
    Packaging
    Tube
    RoHS
    N
    Brand
    NXP Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    MOSFETs
    Unit Weight
    60 mg
    Part # Aliases
    935377234129
    Pd - Power Dissipation
    182 W