1 pcs : GTVA262701FA-V2-R0 - RF JFET Transistors 270W GaN HEMT 48V 2496 to 2690MHz
    • 1 pcs : GTVA262701FA-V2-R0 - RF JFET Transistors 270W GaN HEMT 48V 2496 to 2690MHz

    1 pcs : GTVA262701FA-V2-R0 - RF JFET Transistors 270W GaN HEMT 48V 2496 to 2690MHz

    Allparts-UK/M/941-GTVA262701FAV2R0
    MACOM
    £315.67
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    5G RF JFETs & LDMOS FETs MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN on SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for use in multi-standard cellular power amplifier applications.
    Product Details
    MACOM
    Allparts-UK/M/941-GTVA262701FAV2R0
    GTVA262701FA-V2-R0
    10 Items

    Data sheet

    Manufacturer
    MACOM
    Maximum Operating Temperature
    + 225 C
    Minimum Operating Temperature
    -
    Mounting Style
    Flange Mount
    Product Type
    RF JFET Transistors
    Package/Case
    H-87265J-2
    Product Category
    RF JFET Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    MACOM
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    Transistors
    Pd - Power Dissipation
    -