1 pcs : QPD1008L - RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

QPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.