1 pcs : QPD1026L - RF JFET Transistors 1500W, 65V,GaN pre-matched, 442(+/-5) MH

QPD1026L GaN RF Input-Matched Transistor Qorvo QPD1026L GaN RF Input-Matched Transistor is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.