1 pcs : QPD1016L - RF JFET Transistors DC-1.7 GHz, 500W, 50V, GaN RF Tr

QPD1016L GaN RF Transistor Qorvo QPD1016L GaN RF Transistor is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from DC to 1.7GHz. The QPD1016L provides a linear gain of 18dB at 1.3GHz and features a drain efficiency of 67% at 3dB compression. The device can support pulsed and linear operations.