1 pcs : CGH09120F - RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
    • 1 pcs : CGH09120F - RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt

    1 pcs : CGH09120F - RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt

    Allparts-UK/M/941-CGH09120F
    MACOM
    £640.78
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    CGH09120F GaN High Electron Mobility Transistor MACOM CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain, and wide bandwidth capabilities. This module allows for a high degree of DPD correction to be applied, making it ideal for MC-GSM, WCDMA, and LTE amplifier applications. This MACOM transistor is housed in a ceramic/metal flange package.
    Product Details
    MACOM
    Allparts-UK/M/941-CGH09120F
    CGH09120F
    10 Items

    Data sheet

    Manufacturer
    MACOM
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Screw Mount
    Product Type
    RF JFET Transistors
    Configuration
    Single
    Product Category
    RF JFET Transistors
    Packaging
    Tray
    RoHS
    Details
    Brand
    MACOM
    Factory Pack Quantity Factory Pack Quantity
    20
    Subcategory
    Transistors
    Pd - Power Dissipation
    56 W