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    1 pcs : NPTB00004A - RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT
    • 1 pcs : NPTB00004A - RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT

    1 pcs : NPTB00004A - RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT

    Allparts-UK/M/937-NPTB00004A
    MACOM
    £50.71
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    NPTB00004A GaN HEMT MACOM NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004.
    Product Details
    MACOM
    Allparts-UK/M/937-NPTB00004A
    NPTB00004A
    10 Items

    Data sheet

    Manufacturer
    MACOM
    Operating frequency
    6 GHz
    Maximum Operating Temperature
    + 200 C
    Mounting Style
    SMD/SMT
    Product Type
    RF JFET Transistors
    Technology
    GaN-on-Si
    Package/Case
    SOIC-8
    Gain
    16 dB
    Product Category
    RF JFET Transistors
    Packaging
    Tray
    RoHS
    Details
    Brand
    MACOM
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    95
    Subcategory
    Transistors
    Unit Weight
    220 mg
    Pd - Power Dissipation
    11.6 W