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    1 pcs : QPD1003 - RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
    • 1 pcs : QPD1003 - RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

    1 pcs : QPD1003 - RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

    Allparts-UK/M/772-QPD1003
    Qorvo
    £2,215.36
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    QPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
    Product Details
    Qorvo
    Allparts-UK/M/772-QPD1003
    QPD1003
    10 Items

    Data sheet

    Manufacturer
    Qorvo
    Series
    QPD1003
    Maximum Operating Temperature
    + 85 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    RF JFET Transistors
    Configuration
    Single
    Package/Case
    RF-565
    Product Category
    RF JFET Transistors
    Packaging
    Tray
    RoHS
    Details
    Brand
    Qorvo
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    18
    Subcategory
    Transistors
    Unit Weight
    104.655 g
    Part # Aliases
    1131389
    Pd - Power Dissipation
    370 W