1 pcs : QPD1025L - RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
    • 1 pcs : QPD1025L - RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

    1 pcs : QPD1025L - RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

    Allparts-UK/M/772-QPD1025L
    Qorvo
    £2,713.48
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    QPD1025 & QPD1025L RF Input-Matched Transistors Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. The QPD1025 and QPD1025L transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.
    Product Details
    Qorvo
    Allparts-UK/M/772-QPD1025L
    QPD1025L
    10 Items

    Data sheet

    Manufacturer
    Qorvo
    Series
    QPD1025L
    Maximum Operating Temperature
    + 85 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    RF JFET Transistors
    Configuration
    Dual Gate Dual Drain
    Package/Case
    NI-1230-4
    Product Category
    RF JFET Transistors
    Packaging
    Tray
    RoHS
    Details
    Brand
    Qorvo
    Moisture Sensitive
    Yes
    Factory Pack Quantity Factory Pack Quantity
    18
    Subcategory
    Transistors
    Unit Weight
    39.665 g
    Pd - Power Dissipation
    758 W