10 pcs : 2SC5087R(TE85L,F) - RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB
    • 10 pcs : 2SC5087R(TE85L,F) - RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB

    10 pcs : 2SC5087R(TE85L,F) - RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB

    10AllpartsUK7572SC5087RTE85LF
    TOSHIBA
    10 pcs : 2SC5087R(TE85L,F) - RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB
    £25.04
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    2SC5086 / 2SC5087 / 2SC5108 RF Bipolar Transistors Toshiba 2SC5086 / 2SC5087 / 2SC5108 RF Bipolar Transistors are silicon NPN epitaxial planar transistors with 20V collector-base voltage, 10V or 12V collector-emitter voltage, and 3V emitter-base voltage. They provide capabilities such as low distortion, low noise figure, and high ESD protection, making these devices suitable for creating high-performance designs. Toshiba 2SC5086 / 2SC5087 / 2SC5108 RF Bipolar Transistors are primarily designed for VCO and VHF~UHF band low noise amplifier applications such as terrestrial TV tuners, satellite TV tuners, CATV tuners, DAB systems, FM tuners, and radios.
    Product Details
    TOSHIBA
    10AllpartsUK7572SC5087RTE85LF
    2SC5087R(TE85L,F)
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Package/Case
    SOT-523
    Product Category
    Bipolar Transistors - BJT
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Central Semiconductor
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    28.610 mg
    Pd - Power Dissipation
    250 mW