1 pcs : BFU530AR - RF Bipolar Transistors NPN wideband silicon RF transistor
    • 1 pcs : BFU530AR - RF Bipolar Transistors NPN wideband silicon RF transistor

    1 pcs : BFU530AR - RF Bipolar Transistors NPN wideband silicon RF transistor

    Allparts-UK/M/771-BFU530AR
    £10.97
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    BFU5x NPN Wideband Silicon RF Transistors Nexperia BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.
    Product Details
    Allparts-UK/M/771-BFU530AR
    BFU530AR
    10 Items

    Data sheet

    Manufacturer
    NXP Semiconductors
    Series
    BFU530A
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    RF Bipolar Transistors
    Package/Case
    SOT-23-3
    Product Category
    RF Bipolar Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    NXP Semiconductors
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    7.530 mg
    Part # Aliases
    934067698215
    Pd - Power Dissipation
    450 mW