10 pcs : BGA855N6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ
    • 10 pcs : BGA855N6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ

    10 pcs : BGA855N6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ

    10(AllpartsUK)726BGA855N6E6327XTS
    10 pcs : BGA855N6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ
    £28.92
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    BGA855N6 Low-Noise RF Amplifier Infineon Technologies BGA855N6 Low-Noise RF Amplifier enhances GNSS signal sensitivity for L-band applications operating within the 1164MHz to 1300MHz frequency range. This amplifier covers GPS L2/L5, Galileo E5a, E5b, E6, Glonass G3, G2, Beidou B3, and B2 bands. The BGA855N6 amplifier features 17.8dB insertion power gain, low current consumption, high linearity performance, internally matched RF output, and high accuracy. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. This amplifier is based on Infineon Technologies‘ B9HF Silicon Germanium technology and operates with a supply voltage of 1.1V to 3.3V.
    Product Details
    10(AllpartsUK)726BGA855N6E6327XTS
    BGA855N6E6327XTSA1
    10 Items

    Data sheet

    Manufacturer
    Infineon
    Series
    BGA855N6
    Maximum Operating Temperature
    + 85 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    RF Amplifier
    Package/Case
    TSNP-6
    Product Category
    RF Amplifier
    Packaging
    MouseReel
    RoHS
    Details
    Supply Voltage - Min
    1.1 V
    Supply Voltage - Max
    3.3 V
    Brand
    Infineon Technologies
    Factory Pack Quantity Factory Pack Quantity
    12000
    Subcategory
    Wireless & RF Integrated Circuits
    Unit Weight
    0.830 mg