1 pcs : BGA5H1BN6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ
    • 1 pcs : BGA5H1BN6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ

    1 pcs : BGA5H1BN6E6327XTSA1 - RF Amplifier RF MMIC SUB 3 GHZ

    Allparts-UK/M/726-BGA5H1BN6E6327XT
    £8.05
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    BGA5x1BN6 Low-noise Amplifiers Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control. The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the VCC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm2, the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.
    Product Details
    Allparts-UK/M/726-BGA5H1BN6E6327XT
    BGA5H1BN6E6327XTSA1
    10 Items

    Data sheet

    Manufacturer
    Infineon
    Operating frequency
    2.3 GHz to 2.69 GHz
    Maximum Operating Temperature
    + 85 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Type
    Low Noise Amplifiers
    Product Type
    RF Amplifier
    Technology
    SiGe
    Package/Case
    TSNP-6
    Gain
    18 dB
    Product Category
    RF Amplifier
    Packaging
    Cut Tape
    RoHS
    Details
    Supply Voltage - Min
    1.5 V
    Supply Voltage - Max
    3.6 V
    Brand
    Infineon Technologies
    Operating Supply Voltage
    1.5 V to 3.6 V
    Factory Pack Quantity Factory Pack Quantity
    12000
    Subcategory
    Wireless & RF Integrated Circuits
    Unit Weight
    0.830 mg
    Pd - Power Dissipation
    60 mW
    Operating Supply Current
    8.5 mA
    NF - Noise Figure
    0.7 dB