600V Qspeed Silicon Diode Power Integrations 600V Qspeed Silicon Diode is designed to replace SiC diodes for efficient performance in high switching frequency applications. The 0.35-micron technology of the Qspeed diode improves performance and gives predictable results. This diode features low QRR of any 600V silicon diode, low IRRM, low tRR, and soft recovery. The Qspeed silicon diode is AEC-Q1011 qualified, combines both a Schottky and PiN junction in the same device, and is ideal for automotive applications.