FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET– Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail20 kV/μs Minimum Common Mode RejectionWide Supply Voltage Range: 15 V to 30 VFast Switching Speed Over Full Operating Temperature Range– 500 ns Maximum Propagation Delay– 300 ns Maximum Pulse Width DistortionUnder-Voltage Lockout (UVLO) with HysteresisExtended Industrial Temperate Range: -40°C to 100°CAC and Brushless DC Motor DrivesIndustrial InverterUninterruptible Power SupplyInduction HeatingIsolated IGBT/Power MOSFET Gate Drive