2 pcs - N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

Data sheet

Manufacturer

Infineon

A-Supplier

Allparts-UK-R

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

3

Package Type

D2PAK (TO-263)

Maximum Power Dissipation

300 W

Number of Elements per Chip

1

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Maximum Drain Source Resistance

4.5 mΩ

Minimum Gate Threshold Voltage

2V

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

155 nC @ 10 V

Transistor Material

Si