The Infineon HEXFET power MOSFET from international rectifier advanced processing techniques to achieve extremely low on resistance per silica area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFET are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of application.Planar cell structure for wide SOAOptimized for broadest availability from distribution partnersProduct qualification according to JEDEC standard