10 pcs : SISS27ADN-T1-GE3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    • 10 pcs : SISS27ADN-T1-GE3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S

    10 pcs : SISS27ADN-T1-GE3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S

    10electronicpartsUK78SISS27ADNT1GE3
    10 pcs : SISS27ADN-T1-GE3 - MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    £33.78
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
    Product Details
    10electronicpartsUK78SISS27ADNT1GE3
    SISS27ADN-T1-GE3
    10 Items

    Data sheet

    Manufacturer
    Vishay Semiconductors
    Width
    3.55 mm
    Height
    1.65 mm
    Length
    6.55 mm
    Series
    FZT600
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Darlington Transistors
    Package/Case
    SOT-223
    Product Category
    Darlington Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    1000
    Subcategory
    Transistors
    Unit Weight
    190 mg
    REACH - SVHC
    Details
    Pd - Power Dissipation
    2 W